Si-Based GeSn Photodetector for Mid-Infrared Integrated Microwave Photonics
Si-Based GeSn Photodetector for Mid-Infrared Integrated Microwave Photonics
复制标题
用于中红外集成微波光子学的硅基 GeSn 光电探测器
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Shui
中科院分区：
文献类型：
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作者：
S. Ghetmiri;Huong Tran;A. Mosleh;W. Du;Jifeng Liu;Baohua Li;M. Mortazavi;Shui
设计并仿真了一种用于红外集成微波光子应用的高速硅基锗锡光电探测器。该设计基于cvd生长的GeSn体NIP光电探测器结构，其中锡含量为8%，优化检测波长为2 um，可以扩展到具有较高锡含量的中远红外光谱。直流（DC）和频率响应仿真结果表明，响应率为0.02 A/W，最大-3 dB带宽为10 GHz，为2 $mu$m。这一工作表明GeSn高速光电探测器是未来红外微波通信的一个有希望的候选者。
A high-speed Si-based Germanium-Tin (GeSn) photodetector is designed and simulated for infrared integrated microwave photonic applications. The design is based on the CVD-grown GeSn bulk NIP photodetector structure with 8% Sn composition optimized for the detection wavelength up to 2 um that can be extended to mid and far infrared spectra with higher Sn compositions. The electrical direct current (DC) and frequency response simulation results showed the responsivity of 0.02 A/W and maximum -3 dB bandwidth of 10 GHz at 2 $mu$m. This work indicates the GeSn high-speed photodetector as a promising candidate for future of infrared microwave communication.