Correction to Ambipolar Phosphorene Field Effect Transistor.
Correction to Ambipolar Phosphorene Field Effect Transistor.
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DOI：
10.1021/acsnano.6b00680
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发表时间：
2016-02
期刊：
影响因子：
17.1
通讯作者：
Saptarshi Das;M. Demarteau;A. Roelofs
中科院分区：
文献类型：
--
作者：
Saptarshi Das;M. Demarteau;A. Roelofs
VTH instead of VBG because threshold adjustments were done in order to compensate for the top gate bias applied to the device. Additionally, as mentioned in the caption, Figure 1b represents the optical image of a prototype device with a 60 nm capping layer of alumina (to demonstrate the importance of a capping layer for the stabilization of phosphorene devices). The device characteristics shown in Figure 1c do not correspond to the image shown in Figure 1b. Rather the device characteristics presented in Figures 1c and 6b correspond to the same device shown in Figure 6a. This mislabeling neither impacts our analysis nor changes any of the findings of the paper. However, we would like to submit the attached revised figure with correct labeling.
