The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001)
The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001)
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DOI：
10.7567/1882-0786/ab103e
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发表时间：
2019-04
影响因子：
2.3
通讯作者：
A. D. Hatmanto;K. Kita
中科院分区：
文献类型：
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作者：
A. D. Hatmanto;K. Kita
研究了热氧化4 H-SiC（0001）表面晶格畸变引入和晶格弛豫的动力学。我们的结果表明，晶格畸变的引入和晶格弛豫似乎分别遵循零阶和二阶速率定律。晶格畸变的引入和弛豫的活化能分别为1.39 eV和1.11 eV，表明晶格畸变是由键的重排或移动过程决定的，活化能相对较低。此外，残留在4 H-SiC表面区域的副产物的形成被预测为显著的晶格畸变的可能来源。
The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001) were investigated. Our results suggested that lattice distortion introduction and lattice relaxation seem to follow zeroth and second order rate laws, respectively. The obtained activation energy of ∼3.9 eV for lattice distortion introduction and ∼1 eV for its relaxation indicate that the lattice distortion is determined by a bond rearrangement or movement process with a relatively low activation energy. Furthermore, the formation of byproducts which remain at the surface region of 4H-SiC was predicted to be a possible origin of the significant lattice distortion.