Dissolution and off-stoichiometric formation of compound layers in solid state reactions
Dissolution and off-stoichiometric formation of compound layers in solid state reactions
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固态反应中化合物层的溶解和非化学计量形成
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
A. Taranovskyy
中科院分区：
文献类型：
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作者：
Z. Erdélyi;D. Beke;A. Taranovskyy
在许多技术过程中，中间相通过最初彼此层叠的纯材料的固态反应（SSR）产生。通常认为，在对这种结构进行热处理期间，化学计量的化合物膜形成并随后生长，或者如果这种层已经存在，则其进一步生长。我们表明，在许多现实的情况下，化合物层的形式，并开始增长高度关闭化学计量。此外，最初存在的化学计量化合物层可以溶解，然后化学计量改革。我们的发现对于利用SSR早期阶段的纳米技术至关重要;例如，用于微/纳米电子学中的硅基器件的金属化。
In many technological processes, intermediate phases are produced by solid state reactions (SSRs) of pure materials initially layered onto each other. It is generally accepted that during heat treatments of such structures, stoichiometric compound films form and then grow, or if such a layer already exists then it growths further. We show that in many realistic cases the compound layer forms and starts to grow highly off stoichiometrically. Moreover, an initially existing stoichiometric compound layer may dissolve then off stoichiometrically reform. Our findings are of primary importance for nanotechnologies where early stages of SSR are utilized; e.g., metallization for silicon-based devices in micro-/nanoelectronics.