Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)‐(111)B facet structures for edge quantum wires
Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)‐(111)B facet structures for edge quantum wires
复制标题
提高台面上 GaAs 分子束外延生长的晶体学选择性以及边缘量子线的 (001)-(111)B 面结构的形成
DOI：
10.1063/1.105370
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发表时间：
1991
影响因子：
4
通讯作者：
H. Sakaki
中科院分区：
文献类型：
--
作者：
Yusui Nakamura;S. Koshiba;M. Tsuchiya;H. Kano;H. Sakaki
系统研究了(001)面和(111)B面组成的台面上GaAs分子束外延生长的晶体学选择性。研究发现，通过减少 (111)B 面上的 As 通量，可以将 (111)B 面上的生长速率大幅降低至 (001) 表面上生长速率的~1/30。这种增强的选择性是由增强的界面迁移引起的，并且强烈表明在(001)-(111)B台面上形成边缘量子线所需的微异质结构的可行性。
The crystallographic selectivity of molecular beam epitaxial growth of GaAs on mesas consisting of a (001) surface and (111)B facets is studied systematically. It was found that the growth rate on (111)B facets can be drastically reduced to ∼1/30 of the growth rate on (001) surface by the reduction of As flux on the (111)B facets. This enhanced selectivity results from the enhanced intersurface migration, and strongly indicates a feasibility of forming microheterostructures needed for the fabrication of edge quantum wires on (001)‐(111)B mesas.