Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma
Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma
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DOI：
10.1016/j.carbon.2014.08.015
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发表时间：
2014-11
期刊：
影响因子：
10.9
通讯作者：
R. Rozada;P. Solís-Fernández;J. I. Paredes;A. Martínez-Alonso;H. Ago;J. Tascón
中科院分区：
文献类型：
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作者：
R. Rozada;P. Solís-Fernández;J. I. Paredes;A. Martínez-Alonso;H. Ago;J. Tascón
以可控的方式引入原子级缺陷并了解它们对石墨烯特性的影响对于开发基于这种二维材料的许多应用至关重要。在这里，我们研究了使用微波诱导的氧等离子体对生成的小尺寸的原子空位（孔）的化学气相沉积生长的石墨烯。扫描隧道显微镜显示，空位密度在103-105μm− 2范围内可调，可以通过适当的等离子体参数获得。传输测量和拉曼光谱显示p型掺杂和减少的电荷载流子迁移率的空位装饰的样品。这种等离子体改性的石墨烯可以用于，例如，气体或液体分离或分子传感。
The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwave-induced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103–105μm−2range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.