Optical properties of indium-doped silicon reinspected
Optical properties of indium-doped silicon reinspected
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DOI：
10.1088/0022-3719/15/28/016
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发表时间：
1982-10
期刊：
影响因子：
--
通讯作者：
W. Schelter;W. Hell;R. Helbig;M. Schulz
中科院分区：
文献类型：
--
作者：
W. Schelter;W. Hell;R. Helbig;M. Schulz
本文给出了掺铟硅在不同温度下的全吸收光谱，包括束缚-自由跃迁和束缚-束缚跃迁。的最大吸收截面为绑定到自由的过渡被发现是σ max=4.5*10-17厘米2。通过吸收和光电导测量确定电离能。这两种方法产生EIn=157+或-1 meV。在中间温度下的光电导测量也观察到绑定到绑定的转变。吸收线的相对振子强度与In浓度呈线性关系。实验数据进行了比较与不同的模型在Si中的杂质的束缚到自由和束缚到束缚的转变。
A full optical absorption spectrum for indium-doped silicon taken at different temperatures is presented which comprises the bound-to-free as well as the bound-to-bound transitions. The maximum absorption cross section for bound-to-free transitions is found to be sigma max=4.5*10-17 cm2. The ionisation energy was determined by absorption and photoconductivity measurements. Both methods yield EIn=157+or-1 meV. The bound-to-bound transitions were also observed by photoconductivity measurements at intermediate temperatures. The relative oscillator strength for the absorption lines shows a linear dependence on the In concentration. Experimental data are compared with different models for bound-to-free and bound-to-bound transitions at impurities in Si.