Ultraviolet emission from a ZnO rod homojunction light-emitting diode
Ultraviolet emission from a ZnO rod homojunction light-emitting diode
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DOI：
10.1063/1.3243453
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发表时间：
2009-10
影响因子：
4
通讯作者：
Xiao Wei Sun;B. Ling;Jun Liang Zhao;Swee Tiam Tan;Yi Yang;Yiqiang Shen;Zhili Dong;X. C. Li-
中科院分区：
文献类型：
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作者：
Xiao Wei Sun;B. Ling;Jun Liang Zhao;Swee Tiam Tan;Yi Yang;Yiqiang Shen;Zhili Dong;X. C. Li-
在室温下，用氧化锌棒同质结发光二极管阵列实现了紫外电致发光。P型掺杂是通过向无缺陷的氧化锌棒中注入磷(P)离子，然后进行热处理来实现的。高分辨电子显微镜显示，与未掺磷的氧化锌棒相比，退火后的单晶掺磷氧化锌棒具有晶格压缩效应，表明磷原子掺入到了纤锌矿结构中。低温光致发光光谱和单棒电流-电压表征证实了P型掺杂的存在。
Ultraviolet electroluminescence was demonstrated at room temperature from a ZnO rod homojunction light-emitting diode array. The p-type doping was realized by phosphorous (P) ion implantation into defect-free ZnO rods followed by annealing. High resolution transmission electron microscopy shows the lattice compression of annealed single crystalline P-doped ZnO rod compared to the as-grown ZnO rod, suggesting atomically incorporation of P into the ZnO wurtzite structure. p-type doping was confirmed by low temperature photoluminescence spectra and single rod current-voltage characterization.