Wet Thermal Oxidation of GaAs and GaN
Wet Thermal Oxidation of GaAs and GaN
复制标题
GaAs 和 GaN 的湿热氧化
DOI：
10.5772/8555
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发表时间：
2010
影响因子：
4
通讯作者：
J. Prażmowska
中科院分区：
文献类型：
--
作者：
R. Korbutowicz;J. Prażmowska
本章专门讨论 AIIIBV 半导体化合物（主要是砷化镓和氮化镓）的热湿式氧化。它分为几个主题，包含单斜氧化镓1 -Ga2O3 特性数据、氧化物制造技术和应用描述。第一部分描述了上述半导体氧化物的特性。然后描述了特别关注湿热氧化的制造方法。然后给出了氧化镓结构在电子学中的应用。它还重点关注专用于气体传感器应用的半导体结构，而氧化镓层与包含例如氧化镓层的那些相比，显着改善了探测器的最关键参数。二氧化锡。 AIIIBV和AIIIN半导体化合物作为光电子器件材料而广为人知。它们也经常用于构造高温和微波设备或化学气体传感器。在这些应用中，介电层是必要的。有可能使用自己的氧化物 – Ga2O3 提供了制造许多不同器件 – MOS 结构（金属-氧化物-半导体）的机会。它可以是 MOS 电容器、功率金属氧化物半导体场效应晶体管 (MOSFET)、高迁移率 GaAs MOSFET 或栅极可关断晶闸管，也可能是 CMOS 应用（Pearton 等人，1999 年；Wu 等人，2003 年）。 HEMT 的 MOS 栅极版本具有比金属栅极结构明显更好的热稳定性，并且非常适合气体传感（Schweben 等人，1998；Baban 等人，2005；Hong 等人，2007）。
The chapter is devoted to the thermal wet oxidation of AIIIBV semiconductor compounds, mainly to gallium arsenide and gallium nitride. It has been divided into several topics, containing of monoclinic gallium oxide1 -Ga2O3 properties data, techniques of oxide fabrication and application description. In the first part, properties of mentioned semiconductor’s oxides are characterized. Then methods of manufacturing with a special attention for wet thermal oxidation are described. After that, applications of gallium oxide structures in electronics are given. It focuses also on the semiconductor structures dedicated for gas sensors application while gallium oxide layers improve significantly the most critical parameters of the detector compared to those containing of e.g. SnO2. AIIIBV and AIIIN semiconductors compounds are wide known as materials for optoelectronics devices. They are used often also to the construction of high temperature and microwave devices or chemical gas sensors. In these applications dielectric layers are necessary. There is a possibility of using their own oxides – Ga2O3 gives a chance to manufacture many different devices – MOS structures (Metal-Oxide-Semiconductor). It can be MOS capacitors, power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), high mobility GaAs MOSFETs or gate turn-off thyristors and, probably, CMOS applications (Pearton et al., 1999; Wu et al., 2003). The MOS-gate version of the HEMT has significantly better thermal stability than a metal-gate structure and is well suited to gas sensing (Schweben et al., 1998; Baban et al., 2005; Hong et al., 2007).