Mid-infrared integrated waveguide modulators based on silicon-on-lithium-niobate photonics
Mid-infrared integrated waveguide modulators based on silicon-on-lithium-niobate photonics
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DOI：
10.1364/optica.1.000350
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发表时间：
2014-11-20
期刊：
影响因子：
10.4
通讯作者：
Fathpour, Sasan
中科院分区：
文献类型：
--
作者：
Chiles, Jeff;Fathpour, Sasan
异质集成技术，如直接键合，解决了集成光子学面临的许多问题。特别是，相对较新的中红外(MID-IR)集成光子学领域受到了该波长范围内功能透明衬底的可获得性的阻碍。实现紧凑、高性能光调制和频率转换的关键是硅光子学与具有高二阶非线性极化率的材料的单片集成。通过将大面积的薄单晶硅转移到块状NbO_3(LiNbO_3)衬底上，实现了第一个在中红外范围内利用Pockels或线性电光效应的硅基平台。在3.39微米波长下，Mach-Zehnder集成干涉仪调制器的消光比接近8分贝，半波压长积为26 V·cm，片上插入损耗为3.3分贝，在该平台上制作的超薄光波导的横向电模传输损耗为2.5分贝/厘米。未来的能力，如为集成中红外信号源产生宽带差频，预计将用于已演示的锂上铌酸盐硅平台。(C)2014年美国光学学会
Heterogeneous integration techniques, such as direct bonding, have enabled solutions to many problems facing integrated photonics. In particular, the relatively new field of mid-infrared (mid-IR) integrated photonics has been hindered by the availability of functional, transparent substrates in this wavelength range. The key to achieving compact, high-performance optical modulation and frequency conversion is the monolithic integration of silicon photonics with a material with high second-order nonlinear susceptibility. By transferring large areas of thin, monocrystalline silicon to bulk lithium niobate (LiNbO3) substrates, the first silicon-based platform to exploit the Pockels or linear electro-optic effect in the mid-IR range is achieved. Integrated Mach-Zehnder interferometer modulators with an extinction ratio of similar to 8 dB, a half-wave voltage-length product of 26 V.cm, and an on-chip insertion loss of 3.3 dB are demonstrated at a wavelength of 3.39 mu m. Ultrathin optical waveguides fabricated and characterized on this platform exhibit a low transverse electric mode linear propagation loss of 2.5 dB/cm. Future capabilities such as wideband difference frequency generation for integrated mid-IR sources are envisioned for the demonstrated silicon-on-lithium-niobate platform. (C) 2014 Optical Society of America