An analytic model for calculating trapped charge in amorphous silicon
An analytic model for calculating trapped charge in amorphous silicon
复制标题
计算非晶硅中俘获电荷的解析模型
DOI：
--
复制
发表时间：
1988
期刊：
影响因子：
--
通讯作者：
M. Hack
中科院分区：
文献类型：
--
作者：
J. Shaw;M. Hack
我们提出了一个简单的解析模型，用于计算氢化非晶硅中实际态密度分布中捕获电荷密度作为自由载流子浓度的函数。这对于理解非晶硅器件的行为是必要的，因为它们的特性在很大程度上是由带隙中局域级捕获的高浓度电荷决定的。这样的模型有助于探索电荷捕获过程的本质，并对非晶硅器件（如薄膜晶体管）进行有效的数值模拟。
We present a simple analytic model for calculating the trapped‐charge density as a function of free‐carrier concentration for realistic density‐of‐states distributions in hydrogenated amorphous silicon. This is necessary to understand the behavior of amorphous silicon devices as their characteristics are largely determined by the high concentration of charge trapped by the localized stages in the band gap. Such a model is useful as an aid in exploring the nature of the charge‐trapping process and for the efficient numerical simulation of amorphous‐silicon devices such as thin‐film transistors.