High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier
High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier
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DOI：
10.1063/1.107783
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发表时间：
1992-08
影响因子：
4
通讯作者：
J. Walpole;E. Kintzer;S. Chinn;Christine A. Wang;L. Missaggia
中科院分区：
文献类型：
--
作者：
J. Walpole;E. Kintzer;S. Chinn;Christine A. Wang;L. Missaggia
行波放大器具有高功率、接近衍射极限的连续波性能，采用应变层InGaAs/AlGaAs激光器结构制造，具有横向锥形增益区和防止激光振荡的腔扰流特性。输入光束在传播时衍射，有效地填充锥形有源区。在85 mW的输入光功率下，获得了1.44W的连续输出，中心瓣宽度小于977 nm衍射极限的1.2倍，输出功率为1.28W。只有15 mW的功率入射到放大器上就足以提供1 W的输出到中央波瓣。
High power, nearly diffraction‐limited cw performance has been obtained from a traveling wave amplifier, fabricated in a strained‐layer InGaAs/AlGaAs laser structure, with a laterally tapered gain region and with a cavity‐spoiling feature to prevent laser oscillation. The input beam diffracts as it propagates, efficiently filling the tapered active region. For input optical power of 85 mW from a Ti:sapphire laser, total cw output of 1.44 W has been achieved with 1.28 W in a central lobe with width less than 1.2 times the diffraction limit at 977 nm wavelength. Only 15 mW of power incident on the amplifier was sufficient to provide 1 W output into the central lobe.