Electron trapping in a one-dimensional semiconductor quantum wire with multiple impurities
Electron trapping in a one-dimensional semiconductor quantum wire with multiple impurities
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DOI：
10.1103/physrevb.76.153308
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发表时间：
2007-10-01
影响因子：
3.7
通讯作者：
Petrosky, T.
中科院分区：
文献类型：
--
作者：
Tanaka, S.;Garmon, S.;Petrosky, T.
我们演示了一维半导体量子点阵列系统（量子线）中两个相同吸附原子杂质之间传导电子的捕获。即使当吸附原子杂质的能量位于连续的一维能量微带中时，也会出现束缚稳态。稳态是冯·诺伊曼和维格纳首次提出的连续体束缚态 (BIC) 现象的实现 [Phys. Z. 30, 465 (1929)]。我们分析求解了该局域态的色散方程，这使我们能够揭示 BIC 的机制。 BIC态的出现归因于杂质之间的量子干涉。范霍夫奇点导致另一种类型的束缚态在能带边缘上方和下方形成，这种束缚态可能与 BIC 共存。
We demonstrate the trapping of a conduction electron between two identical adatom impurities in a one-dimensional semiconductor quantum-dot array system (quantum wire). Bound steady states arise even when the energy of the adatom impurity is located in the continuous one-dimensional energy miniband. The steady state is a realization of the bound state in continuum (BIC) phenomenon first proposed by von Neuman and Wigner [Phys. Z. 30, 465 (1929)]. We analytically solve the dispersion equation for this localized state, which enables us to reveal the mechanism of the BIC. The appearance of the BIC state is attributed to the quantum interference between the impurities. The Van Hove singularity causes another type of bound state to form above and below the band edges, which may coexist with the BIC.