Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation
Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation
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DOI：
10.1143/jjap.44.1213
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发表时间：
2005-03-01
期刊：
影响因子：
--
通讯作者：
Matsunami, H
中科院分区：
文献类型：
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作者：
Kimoto, T;Kanzaki, Y;Matsunami, H
4H-SiC（0001）、（0001）和（11 10）在1300℃下被N2O直接氧化，并表征了金属-氧化物-半导体（MOS）界面。与传统的在1150℃下湿氧化O-2相比，N2O氧化在任何表面上都显著降低了界面态密度。在4H-SiC（0001）、（0001）和（110）表面上制造的平面n沟道金属氧化物半导体场效应晶体管（mosfet）分别显示出26、43和78 cm(2)/Vs的有效沟道迁移率。二次离子质谱分析显示，在MOS界面附近有明显的氮原子堆积。N2O氧化可以降低界面过渡层的厚度。讨论了界面结构对晶面的依赖性。一个简单的化学考虑表明，由N2O分解产生的NO2可能是比O-2更有效的碳氧化剂。
4H-SiC(0001), (0001), and (1 1 0) have been directly oxidized by N2O at 1300 degrees C, and metal-oxide-semi conductor (MOS) interfaces have been characterized. The inter-face state density has been significantly reduced by N2O oxidation on any face, compared to conventional wet O-2 oxidation at 1150 degrees C. Planar n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on 4H-SiC(0001), (0001) and (1 1 0) faces have shown effective channel mobilities of 26, 43, and 78 cm(2)/Vs, respectively. Secondary ion mass spectrometry analyses have revealed a clear pileup of nitrogen atoms near the MOS interface. The thickness of the interfacial transition layer can be decreased by N2O oxidation. The crystal face dependence of the interface structure is discussed. A simple consideration of chemistry indicates that NO2 generated from the decomposition of N2O, may be a more efficient oxidant of carbon than O-2.