Characterisation of radiation damage in silicon photomultipliers with a Monte Carlo model
Characterisation of radiation damage in silicon photomultipliers with a Monte Carlo model
复制标题
DOI：
10.1016/j.nima.2008.06.021
复制
发表时间：
2008-05
影响因子：
1.4
通讯作者：
S. S. Majos-S.;P. Achenbach;J. Pochodzalla
中科院分区：
文献类型：
--
作者：
S. S. Majos-S.;P. Achenbach;J. Pochodzalla
测量的响应函数和低光子产额光谱的硅光电倍增管（SiPM）进行了比较，多光电子脉冲高度分布产生的蒙特卡罗模型。导出了SiPM的特征参数。在Mainz Microtron MAMI上用14MeV电子辐照器件。结果表明，第一个明显的损害包括暗脉冲的速率增加和像素增益的均匀性损失。较高的辐射剂量也降低了光子探测效率。结果是特别相关的应用程序中的SiPM光纤探测器在高光度实验。
Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived. The devices were irradiated with 14MeV electrons at the Mainz microtron MAMI. It is shown that the first noticeable damage consists of an increase in the rate of dark pulses and the loss of uniformity in the pixel gains. Higher radiation doses also reduced the photon detection efficiency. The results are especially relevant for applications of SiPM in fibre detectors at high luminosity experiments.