Analysis of diamond surface channel field-effect transistors with AlN passivation layers
Analysis of diamond surface channel field-effect transistors with AlN passivation layers
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DOI：
10.1063/1.4819453
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发表时间：
2013-09-21
影响因子：
3.2
通讯作者：
Kohn, E.
中科院分区：
文献类型：
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作者：
Pietzka, C.;Scharpf, J.;Kohn, E.
金刚石表面沟道场效应晶体管的钝化与金属有机化学气相沉积生长的AlN薄层，以提高表面附近的p型沟道的化学稳定性。电特性表明，如果工艺温度不超过800摄氏度，金刚石中的表面附近导电性在AlN过度生长期间得以保持。然而，与未钝化的氢封端表面相比，片状载流子密度降低约5倍。TEM和XPS分析的组合表明，这种效果不是由表面终止的部分改性或由AlN钝化的极化引起的。然而，金刚石中保留但降低的表面附近导电性可以通过金刚石和AlN膜之间的氢键来解释。在钝化金刚石衬底上制造的场效应晶体管结构在漏源电压高达-70V时表现出稳定的工作，因此可能是未来高压应用的有希望的候选者。(C)2013 AIP Publishing LLC.
Diamond surface channel field effect transistors were passivated with thin AlN layers grown by metal-organic chemical vapor deposition in order to improve the chemical stability of the surface-near p-type channel. Electrical characterization showed that the surface-near conductivity in the diamond is preserved during AlN overgrowth if the process temperature does not exceed 800 degrees C. However, the sheet carrier density is decreased by a factor of about 5 compared to the unpassivated hydrogen-terminated surface. A combination of TEM and XPS analysis showed that this effect is not induced by a partial modification of the surface termination or by a polarization of the AlN passivation. The preserved, but reduced surface-near conductivity in the diamond can however be explained by a hydrogen double bond between the diamond and the AlN film. Field-effect transistor structures fabricated on the passivated diamond substrates showed stable operation up drain-source voltages to -70V and might therefore be promising candidates for future high-voltage applications. (C) 2013 AIP Publishing LLC.