The Circuit/Device Interface in Gunn and IMPATT Diode Applications
The Circuit/Device Interface in Gunn and IMPATT Diode Applications
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Gunn 和 IMPATT 二极管应用中的电路/设备接口
DOI：
10.1109/mwsym.1975.1123374
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发表时间：
1975
影响因子：
3.1
通讯作者：
A. Sweet
中科院分区：
文献类型：
--
作者：
A. Sweet
Gunn和Impatt二极管现在开始被广泛接受，用于消息传送系统的组件。这次演讲的目的是让读者简单地了解这些设备的各种组件应用及其局限性。这里考虑的限制是a)FM噪声属性b)大FM偏差失真属性。
Gunn and impatt diodes are now beginning to find wide acceptance in component use for message carrying systems. The purpose of this talk is to briefly acquaint the reader with the various component applications for these devices and their limitations. The limitations that are considered here are a) FM noise properties b) Large FM deviation distortion properties.