Modification of phonon processes in nanostructured rare-earth-ion-doped crystals
Modification of phonon processes in nanostructured rare-earth-ion-doped crystals
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DOI：
10.1103/physreva.94.013801
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发表时间：
2016-07-01
影响因子：
2.9
通讯作者：
Tittel, Wolfgang
中科院分区：
文献类型：
--
作者：
Lutz, Thomas;Veissier, Lucile;Tittel, Wolfgang
纳米结构化掺杂晶体影响声子态密度，从而修改与声子相互作用引起的原子动力学。我们建议使用粉末或声子带隙晶体形式的纳米结构材料，以实现或改善稀土离子掺杂晶体中不均匀加宽吸收线的持续光谱烧孔和相干性。这对于超精密射频频谱分析仪和光量子存储器等应用至关重要。作为一个例子，我们讨论了声子工程如何使光谱烧孔在方便的电信波段工作的掺铒材料，并提出模拟的情况下，Y2SiO5，一个广泛使用的材料在当前的量子存储器研究的纳米尺寸的粉末和声子晶体的态密度。
Nano-structuring impurity-doped crystals affects the phonon density of states and thereby modifies the atomic dynamics induced by interaction with phonons. We propose the use of nano-structured materials in the form of powders or phononic bandgap crystals to enable or improve persistent spectral hole burning and coherence for inhomogeneously broadened absorption lines in rare-earth-ion-doped crystals. This is crucial for applications such as ultra-precise radio-frequency spectrum analyzers and optical quantum memories. As an example, we discuss how phonon engineering can enable spectral hole burning in erbium-doped materials operating in the convenient telecommunication band and present simulations for density of states of nano-sized powders and phononic crystals for the case of Y2SiO5, a widely used material in current quantum memory research.