Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine
Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine
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DOI：
10.1039/c2jm32121a
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发表时间：
2012-01-01
影响因子：
--
通讯作者：
Li, Run-Wei
中科院分区：
文献类型：
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作者：
Hu, Benlin;Quhe, Ruge;Li, Run-Wei
我们证明了硫堇功能化的还原氧化石墨烯（rGO-th）的均匀溶液和薄膜的形式的电控电子转移。电子转移可以以双向方式实现，这提供了通过π-π非共价功能化来控制石墨烯的电子性质的方法。基于上述石墨烯片和硫代半导体之间的可控电子转移，制造了具有Pt/rGO-th/Pt配置的电阻随机存取存储器，并且显示出具有大于10（4）的大的ON/OFF比的非易失性电阻切换，
We demonstrate the electrically controlled electron transfer of thionine-functionalized reduced graphene oxide (rGO-th) in the form of a homogeneous solution and films. The electron transfer can be realized in a bidirectional way, which provides a method to control the electronic properties of graphene through pi-pi noncovalent functionalization. Based on the aforementioned controllable electron transfer between graphene sheets and thionine, resistance random access memories with a configuration of Pt/rGO-th/Pt were fabricated and show nonvolatile resistive switching with a large ON/OFF ratio of more than 10(4), fast switching speed of