Run-to-run control schemes for CMP process subject to deterministic drifts
Run-to-run control schemes for CMP process subject to deterministic drifts
复制标题
受确定性漂移影响的 CMP 工艺的逐次运行控制方案
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
Jin
中科院分区：
文献类型：
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作者：
Ruey;Argon Chen;Jin
在 IC 制造过程中，化学机械抛光 (CMP) 工艺通常会因抛光垫的磨损而导致每次运行的去除率发生漂移。在本文中，针对确定性漂移下的过程，提出了两种运行控制方案，即预测校正器控制（PCC）和调整指数加权移动平均（d-EWMA）方案。分析推导了两种方案的控制性能，并提供了最佳控制参数的确定。使用现场 CMP 数据的验证结果证明了两种控制方案的控制有效性。
During IC fabrication, the chemical-mechanical polishing (CMP) process usually suffers from a drift in the run-to-run removal rate due to the wear of the polishing pad. In this paper, two run-to-run control schemes, the predictor corrector control (PCC) and adjusted exponentially weighted moving average (d-EWMA) schemes, for processes under deterministic drifts are presented. The control performance of both schemes is analytically derived and the determination of the optimal control parameters is provided. Validation results using the field CMP data demonstrate the control effectiveness of both control schemes.