Investigation of electrical properties in La-doped BiFeO3–PbTiO3 thin films prepared by sol–gel method
Investigation of electrical properties in La-doped BiFeO3–PbTiO3 thin films prepared by sol–gel method
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DOI：
10.1007/s10971-015-3769-2
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发表时间：
2015-06
影响因子：
2.5
通讯作者：
Dongfang Chen;S. Huang;Jianguo Chen;Jinrong Cheng
中科院分区：
文献类型：
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作者：
Dongfang Chen;S. Huang;Jianguo Chen;Jinrong Cheng
采用溶胶-凝胶法制备了La掺杂的多铁性0.7（Bi 1 − xLax）FeO3 - 0.3PbTiO3（BFPT，x = 0，0.01，0.03，0.05和0.1）固溶体薄膜。通过优化几种制备条件，在600 ° C下成功合成了Percent BFPT单相薄膜。X射线衍射结果表明，随着La掺杂浓度的增加，BFPT薄膜的衍射峰逐渐变尖，这可能是由于La掺杂改变了薄膜的晶粒尺寸，促进了薄膜的晶化。与未掺杂的BFPT薄膜相比，介电常数ε r也显示出显著的增加。此外，在BFPT薄膜中掺入少量La原子，可以有效地降低漏电流，改善薄膜在低电场下的铁电性能，这可能与薄膜的晶粒尺寸和畴壁密度密切相关。掺杂浓度为5 mol %的BFPT薄膜在室温下的PrandEc值约为23 µ C/cm 2和80 kV/cm，表明BFPT薄膜在非易失性铁电存储领域具有潜在的应用前景。
AbstractLa-modified thin films of multiferroic 0.7(Bi1−xLax)FeO3–0.3PbTiO3(BFPT,x= 0, 0.01, 0.03, 0.05 and 0.1) solid solution were prepared by sol–gel method. Perovskite BFPT single-phase thin films were successfully synthesized at 600 °C by optimizing several preparation conditions. It was confirmed from X-ray diffraction that BFPT films tend to display sharper peaks with the La concentration, which could be attributed to the changes in grain size and the promotion of La doping in the crystallization. The dielectric constantεralso showed a significant increase as compared to those of the undoped BFPT thin films. Furthermore, substitution of small amount of La atoms in BFPT films was effective in reducing leakage current and improving the ferroelectric behavior at a low electric field, which may strongly associated with the grain size and the domain wall density. ThePrandEcvalues of 5 mol% La-doped BFPT thin films at room temperature were approximately 23 µC/cm2and 80 kV/cm, indicating the potential applications of BFPT thin films in non-volatile ferroelectric memory fields.Graphical Abstract