Half-metallic ferromagnets for magnetic tunnel junctions by ab initio calculations -: art. no. 174428
Half-metallic ferromagnets for magnetic tunnel junctions by ab initio calculations -: art. no. 174428
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DOI：
10.1103/physrevb.72.174428
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发表时间：
2005-11-01
影响因子：
3.7
通讯作者：
Blügel, S
中科院分区：
文献类型：
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作者：
Mavropoulos, P;Lezaic, M;Blügel, S
使用理论参数，我们表明，为了利用半金属铁磁体在隧道磁阻（TMR）结，它是至关重要的，以消除界面状态在费米能级内的半金属间隙;相反，没有这样的问题出现在巨磁阻元件。此外，基于对电子结构的先验理解，我们提出了一种基于半金属锌硫族化合物的反铁磁耦合TMR元件，其中消除了界面态，作为从第一性原理设计材料的范例。我们的结论是支持从头计算。
Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary to this, no such problem arises in giant magnetoresistance elements. Moreover, based on an a priori understanding of the electronic structure, we propose an antiferromagnetically coupled TMR element based on half-metallic zinc-blende chalcogenides, in which interface states are eliminated, as a paradigm of materials design from first principles. Our conclusions are supported by ab initio calculations.