Relaxor and normal ferroelectric behavior in ordered thin films of PbSc0.5Nb0.5O3
Relaxor and normal ferroelectric behavior in ordered thin films of PbSc0.5Nb0.5O3
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PbSc0.5Nb0.5O3 有序薄膜中的弛豫和正常铁电行为
DOI：
10.1063/1.1473672
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发表时间：
2002
影响因子：
3.2
通讯作者：
S. Leppävuori
中科院分区：
文献类型：
--
作者：
M. Tyunina;J. Levoska;S. Leppävuori
采用脉冲激光沉积法，以MgO和LaAlO 3单晶为衬底，La0.5Sr0.5CoO3为底电极，制备了有序钙钛矿结构PbSc0.5Nb0.5O3薄膜.在宽的温度范围（290-625 K）和频率（102-106 Hz）的异质结构的小信号介电响应进行了测量。评估了膜-电极界面的贡献，并分析了膜的真实性质。弛豫和正常的铁电类型的行为被确定在薄膜中。的演变的行为和偏移的介电最大值被发现与沉积的温度和基板的类型。这可能与面内应变、晶粒尺寸和失配位错等微观结构因素有关。
Epitaxial heterostructures of ordered perovskite PbSc0.5Nb0.5O3 thin films were grown by pulsed laser deposition using MgO and LaAlO3 single-crystal substrates, and La0.5Sr0.5CoO3 bottom electrode layers. The small-signal dielectric response of the heterostructures was measured in a broad range of temperatures (290–625 K) and frequencies (102–106 Hz). The contribution of the film–electrode interfaces was evaluated, and the true properties of the films were analyzed. Both relaxor and normal ferroelectric types of behavior were identified in the films. The evolution of behavior and shift of dielectric maxima were found to correlate with the temperature of deposition and the type of the substrate. This was suggested to refer to the microstructural factors such as in-plane strain, grain size, and misfit dislocations.