Monitoring electrically driven cancellation of exciton fine structure in a semiconductor quantum dot by optical orientation
Monitoring electrically driven cancellation of exciton fine structure in a semiconductor quantum dot by optical orientation
复制标题
DOI：
10.1063/1.2805025
复制
发表时间：
2007-10-29
影响因子：
4
通讯作者：
Gaj, J. A.
中科院分区：
文献类型：
--
作者：
Kowalik, K.;Krebs, O.;Gaj, J. A.
我们使用光学取向技术来监测单个 InAs/GaAs 量子点中激子态的简并控制，这是通过施加面内电场实现的。在圆偏振准谐振激发下，激子光致发光在对应于零精细结构分裂的电场下显示出明显的圆偏振最大值。通过分析该最大值的宽度，我们能够确定激子跃迁的均匀线宽。该实验方法被证明对于测试并可能调整单个量子点的光子特性以发射纠缠光子对非常有效。 (C) 2007 年美国物理研究所。
We use optical orientation technique to monitor the degeneracy control of exciton states in a single InAs/GaAs quantum dot, achieved by applying an in-plane electric field. Under circularly polarized quasiresonant excitation, the exciton photoluminescence shows a pronounced maximum of circular polarization at electric field corresponding to zero fine structure splitting. By analyzing the width of this maximum we are able to determine the homogeneous linewidth of the excitonic transition. This experimental method is shown to be very efficient to test and possibly tune the photonic properties of an individual quantum dot for the emission of entangled photon pairs. (C) 2007 American Institute of Physics.