Band gap and electronic structure of an epitaxial, semiconducting Cr0.80Al0.20 thin film.
Band gap and electronic structure of an epitaxial, semiconducting Cr0.80Al0.20 thin film.
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外延半导体 Cr0.80Al0.20 薄膜的带隙和电子结构。
DOI：
10.1103/physrevlett.105.236404
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发表时间：
2010
影响因子：
8.6
通讯作者：
C. Fadley
中科院分区：
文献类型：
--
作者：
Z. Boekelheide;A. Gray;C. Papp;B. Balke;D. Stewart;S. Ueda;K. Kobayashi;F. Hellman;C. Fadley
Cr(1-x)Al(x)在x = 0.15-0.26时表现出半导体行为。本文利用硬x射线光发射光谱和密度泛函理论进一步了解半导体行为。外延Cr(0.80)Al（0.20）薄膜的光电发射测量显示出价带区域的几个特征，包括费米能（E(F)）处的间隙，其价带边缘在E(F)以下95±14 meV。理论与价带测量结果很好地吻合，表明在E(F)处存在一个不完全的间隙，这是由于M处的空穴带几乎移动到E(F)以下。
Cr(1-x)Al(x) exhibits semiconducting behavior for x = 0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr(0.80)Al(0.20) thin film show several features in the valence band region, including a gap at the Fermi energy (E(F)) for which the valence band edge is 95 ± 14 meV below E(F). Theory agrees well with the valence band measurements, and shows an incomplete gap at E(F) due to the hole band at M shifting almost below E(F).