An investigation of thin silver films on cleaved silicon surfaces
An investigation of thin silver films on cleaved silicon surfaces
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劈裂硅表面银薄膜的研究
DOI：
10.1088/0022-3719/12/12/030
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发表时间：
1979
期刊：
影响因子：
--
通讯作者：
A. W. Parke
中科院分区：
文献类型：
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作者：
A. McKinley;R. H. Williams;A. W. Parke
用LEED、俄歇电子能谱和角分辨光电子能谱研究了真空解理(111)硅表面。实验结果有力地证明了Haneman模型在描述解理面重构过程中的有效性。研究了厚度从单层(0.1)到几千个AA的银覆层的生长，证实了STranski-Krastanov生长机制。在干净的表面上，银显示(111)外延，磁区取向平行于硅衬底。单层银原子的沉积消除了硅的2*1重构，这种硅-银单分子层界面的电子性质与清洁的硅或厚的银膜有很大的不同。数据表明，硅和银之间形成的肖特基势垒在任何银沉积之前就已经完全形成，即它的大小与清洁表面的能带弯曲相同。讨论了这一结果的意义。此外，还对硅片上银膜的粘附性进行了探讨。界面失效被认为是本质上的“内聚性”而不是“粘附性”，并发生在吸附的银单分子层和剩余的银膜之间的应变区。
Vacuum-cleaved (111) silicon surfaces have been probed using LEED, AES and angle-resolved photoelectron spectroscopy. The experiments provide strong evidence for the validity of the Haneman model in describing the crystallography of the reconstructed cleaved face. The growth of silver overlayers ranging in thickness from a fraction (0.1) of a monolayer to several thousand AA was examined and the Stranski-Krastanov growth mechanism confirmed. On clean surfaces, silver shows (111) epitaxy with domains oriented parallel to the silicon substrate. The deposition of a single monolayer of silver atoms removes the silicon 2*1 reconstruction and the electronic nature of this silicon-silver monolayer interface is quite different from either that of the clean silicon or a thick silver film. The data show that the Schottky barrier formed between silicon and silver is already fully formed before the deposition of any silver, i.e. it has the same magnitude as the band bending at the clean surface. The implications of this result are discussed. In addition the adhesive nature of silver films on silicon has been probed. Interfacial failure is believed to be 'cohesive' rather than 'adhesive' in nature and occurs in the strained region between an adsorbed silver monolayer and the remainder of the silver film.