Improved electron‐beam patterning of Si with self‐assembled monolayers
Improved electron‐beam patterning of Si with self‐assembled monolayers
复制标题
改进的自组装单层硅电子束图案化
DOI：
10.1063/1.116959
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发表时间：
1996
影响因子：
4
通讯作者：
D. Allara
中科院分区：
文献类型：
--
作者：
C. Whelan;M. Lercel;H. Craighead;K. Seshadri;D. Allara
已经探索了一系列工艺，以增强自组装单层电子束抗蚀剂用于图案化硅的实用性。用扫描电子显微镜曝光了十八烷基硅氧烷自组装单层抗蚀剂，束能量为20keV，剂量为320μC/cm~2。在用紫外光和臭氧显影出图案化的单分子膜后，它作为底层天然氧化物的湿式蚀刻掩膜。使用图案化的氧化物作为反应离子刻蚀掩模，在硅中刻蚀了线宽为30 nm的∼。采用该工艺，硅的最大刻蚀深度可达90 nm。
A set of processes has been explored that enhances the utility of self‐assembled‐monolayer electron‐beam resists for patterning silicon. A self‐assembled monolayer resist of octadecylsiloxane was exposed using a scanning electron microscope with a 20 keV beam energy and dose of 320 μC/cm2. After the patterned monolayer was developed using ultraviolet light and ozone, it served as a wet etch mask for the underlying native oxide. Linewidths of ∼30 nm were etched in silicon using the patterned oxide as a reactive ion etch mask. The maximum etch depth achieved in silicon was 90 nm using this process.