Nonequilibrium Spin Fluctuations in Nonmagnetic Single-Electron Transistors and Quantum Dots
Nonequilibrium Spin Fluctuations in Nonmagnetic Single-Electron Transistors and Quantum Dots
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DOI：
10.1023/a:1023625722345
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发表时间：
2003-04
期刊：
影响因子：
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通讯作者：
J. Martinek;J. Barnaś;G. Schön;S. Takahashi;S. Maekawa
中科院分区：
文献类型：
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作者：
J. Martinek;J. Barnaś;G. Schön;S. Takahashi;S. Maekawa
结果表明，当岛上的自旋弛豫较慢时，非平衡自旋涨落显著影响单电子晶体管中的电子输运。为了描述自旋涨落，“正统”隧穿理论通过考虑电子自旋而得到推广。结果表明，连续电荷态之间的跃迁可以通过高自旋态发生，这极大地改变了库仑阶跃的形状，并在低温下产生了额外的共振。
It is shown that nonequilibrium spin fluctuations significantly influence electronic transport in a single-electron transistor, when the spin relaxation on the island is slow. To describe spin fluctuations, the “orthodox” tunneling theory is generalized by taking into account the electron spin. It is shown that the transition between consecutive charge states can occur via high-spin states, which significantly modifies the shape of Coulomb steps and gives rise to additional resonances at low temperatures.