Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine.
Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine.
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DOI：
10.1186/1556-276x-7-93
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发表时间：
2012-01-30
影响因子：
--
通讯作者：
Jeong S
中科院分区：
文献类型：
--
作者：
Joung S;Yoon S;Han CS;Kim Y;Jeong S
胶体III-V族半导体量子点[NQD]已经引起了人们的兴趣，因为它们与II-VI族化合物相比具有降低的毒性。然而，III-V族半导体纳米晶的研究和应用受到其合成困难的限制。特别地，难以控制成核，因为III-V族半导体中的分子键是高度共价的。提出了一种利用新合成的具有不同功能基团的有机金属磷[P]前驱体同时保留P-Si键的InP NQD的合成方法。在我们的研究中引入大体积侧链提高了稳定性，同时促进了InP的形成，并在容易的低温区域（210°C至300°C）下具有强限制。用ZnS进一步包覆壳层得到高度发光的核-壳材料。首次设计和合成了用于高质量InP NQD的P前体，并且我们能够通过改变P前体的反应性来控制成核，从而实现均匀的大尺寸InP NQD。这为大规模生产高质量的无镉量子点开辟了道路。
Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots.