Effect of doping profile on tunneling field effect transistor performance
Effect of doping profile on tunneling field effect transistor performance
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DOI：
10.1109/cde.2013.6481376
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发表时间：
2013-03
期刊：
影响因子：
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通讯作者：
V. Vijayvargiya;S. Vishvakarma
中科院分区：
文献类型：
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作者：
V. Vijayvargiya;S. Vishvakarma
隧道场效应晶体管 (TFET) 最近因其在低功耗逻辑应用中的潜在用途而引起了极大的兴趣。在本文中，我们研究了均匀掺杂与不同掺杂（高斯）分布对 TFET 性能的影响。我们已经证明，通过在沟道-漏极结处使用低掺杂分布，可以改善 TFET 中的断态电流和亚阈值斜率 (SS)。它提供了改进的 ION/IoFF 和亚阈值斜率，分别为 1010 和 47 mV/dec。此外，通过在靠近源沟道结的沟道中放置小型高密度层，可以将 SS 提高到 43 mV/dec，并将离子电流提高几个数量级。最后，研究表明双极性行为也减少了。
Tunneling field effect transistor (TFETs) has recently attracted considerable interest because of their potential use in low power logic application. In this paper, we have investigated the effect of uniform doping versus varying doping (Gaussian) profile on TFET performance. We have shown that off-state current and subthreshold slope (SS) in the TFET can be improved by using low doping profile at channel-drain junction. It provides an improved ION/IoFF and subthreshold slope of 1010 and 47 mV/dec respectively. Also by placing small high density layer in the channel near source-channel junction improve the SS to 43 mV/dec and Ion current by a few order. Finally, it is shown that ambipolar behavior is also reduced.