Control of the π plasmon in a single layer graphene by charge doping
Control of the π plasmon in a single layer graphene by charge doping
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DOI：
10.1063/1.3630230
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发表时间：
2011-08-22
影响因子：
4
通讯作者：
Chung, J. W.
中科院分区：
文献类型：
--
作者：
Shin, S. Y.;Kim, N. D.;Chung, J. W.
我们报道了单层石墨烯(SLG)中低能pi等离子体激元的激发行为可以通过掺杂外加的K原子来改变，这是实现石墨烯等离子体所必需的特征。利用高分辨电子能量损失谱，我们发现在K掺杂后，SLG中K诱导的电子密度高达n=7×10(13)cm(-2)，使pi等离子体激元能量增加了1.1 eV。然而，当在无量纲坐标中绘制时，发现不同K掺杂的四个修改的色散合并成一条通用曲线，这表明尽管K掺杂，SLG独特的等离子体特性仍被保留。(C)2011年美国物理研究所。[DOI：10.1063/1.3630230]
We report that the behavior of a low-energy pi plasmon excitation in a single layer graphene (SLG) can be modified by doping external potassium (K) atoms, a feature demanded to realize the graphene plasmonics. Using high-resolution electron-energy-loss spectroscopy, we find that upon K-doping the pi plasmon energy increases by 1.1 eV due to the K-induced electron density up to n=7 x 10(13) cm(-2) in SLG. The four modified dispersions for different K-dopings, however, are found to merge into a single universal curve when plotted in the dimensionless coordinates indicating that the unique plasmonic character of SLG is preserved despite the K-dopings. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630230]