Electroluminescence emission from indium oxide and indium‐tin‐oxide
Electroluminescence emission from indium oxide and indium‐tin‐oxide
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DOI：
10.1063/1.335730
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发表时间：
1985-11
影响因子：
3.2
通讯作者：
C. Falcony;J. Kirtley;D. Dimaria;T. Ma;Tze-Chiang Chen
中科院分区：
文献类型：
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作者：
C. Falcony;J. Kirtley;D. Dimaria;T. Ma;Tze-Chiang Chen
报道了氧化铟锡（ITO）和氧化铟薄膜在富硅SiO2-SiO2-ITO（In 2 O3）多层结构中的电致发光发射。所发射的光对于ITO在约3.3eV处具有峰，对于In 2 O3在2.6eV处具有峰。发现光的强度取决于所施加的电场。
Electroluminescence emission from indium‐tin‐oxide (ITO) and indium oxide films incorporated in a Si‐rich SiO2‐SiO2‐ITO (In2O3) multiple‐layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.