Influence of substrate temperature and oxygen/argon flow ratio on the electrical and optical properties of Ga‐doped ZnO thin films prepared by rf magnetron sputtering

Influence of substrate temperature and oxygen/argon flow ratio on the electrical and optical properties of Ga‐doped ZnO thin films prepared by rf magnetron sputtering
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DOI:
10.1002/crat.200610748
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发表时间:
2006-12
影响因子:
1.5
通讯作者:
S. Kim;Jinho Jeon;Hyoun-woo Kim;Jae Gab Lee;Chongmu Lee
S. Kim;Jinho Jeon;Hyoun-woo Kim;Jae Gab Lee;Chongmu Lee
中科院分区:
材料科学4区
文献类型:
--
作者:
S. Kim;Jinho Jeon;Hyoun-woo Kim;Jae Gab Lee;Chongmu Lee

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采用射频磁控溅射法制备了Ga掺杂ZnO薄膜,研究了衬底温度和气氛对薄膜电学和光学性能的影响。Ga掺杂ZnO(GZO)薄膜的电阻率随着衬底温度从室温升高到300°C而降低。在300°C时电阻率最小,为3.3 × 10-4 Ω cm,当衬底温度进一步升高到400°C时,电阻率增大。这种电阻率随衬底温度的变化与GZO膜的结晶度有关。电阻率几乎不随O2/Ar流量比的变化而变化,R为0.25。电阻率随R的这种变化也与结晶度有关。当氧分压高于一定值(R = 0.25 ± 0.10)时,氧化镓在晶界析出,降低载流子浓度和迁移率。当R < 0.75时,光学透射率随着R的增加而增加。这种透射率随R的变化与氧空位浓度和表面粗糙度随R的变化有关。(© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA,魏因海姆)
Effects of substrate temperature and atmosphere on the electrical and optical properties of Ga‐doped ZnO thin films deposited by rf magnetron sputtering were investigated. The electrical resistivity of Ga‐doped ZnO (GZO) films decreases as the substrate temperature increases from room temperature to 300°C. A minimum resistivity of 3.3 × 10–4 Ω cm is obtained at 300°C and then the resistivity increases with a further increase in the substrate temperature to 400°C. This change in resistivity with the substrate temperature is related to the crystallinity of the GZO film. The resistivity nearly does not change with the O2/Ar flow ratio, R for R 0.25. This change in resistivity with R is also related to crystallinity. The crystallinity is enhanced as R increases, but if the oxygen partial pressure is higher than a certain level (R = 0.25 ± 0.10) gallium oxides precipitate at grain boundaries, which decrease both carrier concentration and mobility. Optical transmittance increases as R increases for R < 0.75. This change in transmittance with R is related to changes in oxygen vacancy concentration and surface roughness with R. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)