Radiation-induced edge effects in deep submicron CMOS transistors
Radiation-induced edge effects in deep submicron CMOS transistors
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DOI：
10.1109/tns.2005.860698
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发表时间：
2005-12-01
影响因子：
1.8
通讯作者：
Cervelli, G
中科院分区：
文献类型：
--
作者：
Faccio, F;Cervelli, G
对130mN商用CMOS工艺中晶体管和隔离测试结构的TID响应的研究表明，相对于较老的工艺节点，该工艺具有更高的抗辐射能力。尽管晶体管的薄栅氧化层对剂量具有极强的耐受性，但晶体管边缘的电荷陷阱仍然会导致漏电流，对于窄沟道晶体管来说，会导致阈值电压显著漂移--我们称之为辐射诱导的窄沟道效应(Rince)。
The study of the TID response of transistors and isolation test structures in a 130 mn commercial CMOS technology has demonstrated its increased radiation tolerance with respect to older technology nodes. While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift-an effect that we call Radiation Induced Narrow Channel Effect (RINCE).