Photolithography for Minimal Fab System
Photolithography for Minimal Fab System
复制标题
最小晶圆厂系统的光刻技术
DOI：
10.1541/ieejsmas.133.272
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发表时间：
2013
影响因子：
--
通讯作者：
S. Hara
中科院分区：
文献类型：
--
作者：
S. Khumpuang;H. Maekawa;S. Hara
最小化的Fab系统光刻已经开发用于晶圆图案化工艺，而不需要洁净室。它包括最小的抗蚀剂涂布机，最小的无掩模紫外曝光，最小的掩模对准器和最小的抗蚀剂显影剂。我们已经在实践中证明，对于0.5英寸晶片，使用最小抗蚀剂涂布机的旋涂给出了与4英寸晶片相同的抗蚀剂厚度结果，而不改变到更高的旋转速度。使用数字光处理（DLP）的最小无掩模UV曝光证实，只有一个光强度为150 mW/cm的LED光源可以在几分钟内曝光0.5英寸晶圆。最小掩模对准器在5 - 20秒内进行高速曝光。该矫正器还使用LED光源，其可以产生14mW/cm的光强度。无掩模UV曝光和掩模光刻机的光刻胶分辨率分别为1 μ m和2 μ m。最小显影剂已使显影剂的消耗量最小化。由于表面张力，一定体积的显影剂被保持在晶片表面上，用于缓慢旋转以刺激显影过程。与传统的熔池显影方法相比，可节省显影时间20%。
Minimal Fab System Photolithography has been developed for wafer patterning process without the requirement of a cleanroom. It consists of minimal resist coater, minimal maskless UV exposure, minimal mask aligner and minimal resist developer. We have proved in practice that the spin coating using minimal resist coater for a 0.5-inch wafer gives the identical result of resist thickness compared with 4-inch wafers without changes to a higher rotational speed. The minimal maskless UV exposure using Digital Light Processing (DLP) confirms that only one LED light source with the light intensity of 150 mW/cm can expose over a 0.5-inch wafer in a few minutes. The minimal mask aligner is developed for a high speed exposure within 5-20 seconds. The aligner also uses a LED light source that can produce the light intensity of 14 mW/cm. The present photoresist resolution for the maskless UV exposure and the mask aligner are 1 μm and 2 μm, respectively. The minimal developer has minimized its consumption of developing agents. Due to the surface tension, a volume of developing agent is kept on the wafer surface for slowly spinning to stimulate the developing process. The developing time is 20% saved from that of the conventional puddle development.