Numerical optimization of czochralski sapphire single crystal growth using orthogonal design method
Numerical optimization of czochralski sapphire single crystal growth using orthogonal design method
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DOI：
10.1002/crat.201400013
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发表时间：
2014-05
影响因子：
1.5
通讯作者：
H. Fang;Tian Jun;S. Wang;Y. Long;Meng Zhang;Can Zhao
中科院分区：
文献类型：
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作者：
H. Fang;Tian Jun;S. Wang;Y. Long;Meng Zhang;Can Zhao
直拉法 (Cz) 生长过程中的晶体质量受到固/液 (S/L) 界面凸度的显着影响，这与射频 (RF) 线圈位置、晶体旋转和坩埚旋转等操作条件有关。一般来说，为了高质量的晶体生长，优选平坦的界面形状。由于检查所有影响因素的计算量很大，即使通过数值模拟也很难实现优化条件。幸运的是，正交设计/测试方法提供了一种有效的方法来组织多因素的研究，同时最小化计算量。本文采用该方法基于热场与熔体流动耦合计算来研究直拉蓝宝石单晶生长的影响因素。正交分析清楚地揭示了在当前参数范围下实现相对平坦的 S/L 界面的优化生长条件。
Crystal quality during Czochralski (Cz) growth is influenced significantly by the convexity of solid/liquid (S/L) interface, which is related to operating conditions, such as Radio‐Frequency (RF) coil position, crystal rotation and crucible rotation. Generally, a flat interface shape is preferred for high‐quality crystal growth. It is difficult to achieve the optimized conditions even from numerical modeling due to the large computational load from examining all of the affecting factors. Orthogonal design/test method, fortunately, provides an efficient way to organize the study of multiple factors with the minimization of computational load. In the paper, this method is adopted to investigate the affecting factors of Cz‐sapphire single crystal growth based on the coupled calculation of thermal field and melt flows. The orthogonal analysis clearly reveals the optimized growth conditions to achieve a relative flat S/L interface under the current ranges of the parameters.