Comparison of ionizing radiation effects in 0.18 and 0.25 /spl mu/m CMOS technologies for analog applications
Comparison of ionizing radiation effects in 0.18 and 0.25 /spl mu/m CMOS technologies for analog applications
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DOI：
10.1109/tns.2003.820767
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发表时间：
2003-12
影响因子：
1.8
通讯作者：
M. Manghisoni;L. Ratti;V. Re;V. Speziali;G. Traversi;A. Candelori
中科院分区：
文献类型：
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作者：
M. Manghisoni;L. Ratti;V. Re;V. Speziali;G. Traversi;A. Candelori
我们提出了一个比较研究的电离辐射效应在0.18和0.25 /SPL μ/m的CMOS晶体管，在低噪声抗辐射模拟电路的设计与器件缩放的影响进行评估的目标。在用10 keV X射线和/sup 60/Co /spl γ/-射线照射之前和之后以及在随后的退火之后监测器件参数。讨论了辐照和退火过程中不同偏压条件的影响。结果被用来指出不同的辐射硬度属性的检查技术，属于不同的CMOS代。
We present a comparative study of ionizing radiation effects in 0.18 and 0.25 /spl mu/m CMOS transistors, with the goal of evaluating the impact of device scaling in the design of low-noise rad-hard analog circuits. Device parameters were monitored before and after irradiation with 10 keV X-rays and /sup 60/Co /spl gamma/-rays and after subsequent annealing. The effects of different biasing conditions during irradiation and annealing are discussed. The results are used to point out the different radiation hardness properties of the examined technologies, belonging to different CMOS generations.