Boron-Doped Diamond Film Homoepitaxially Grown on High-Quality Chemical-Vapor-Deposited Diamond (100)
Boron-Doped Diamond Film Homoepitaxially Grown on High-Quality Chemical-Vapor-Deposited Diamond (100)
复制标题
高品质化学气相沉积金刚石上同质外延生长的掺硼金刚石薄膜 (100)
DOI：
10.1143/jjap.40.4145
复制
发表时间：
2001
影响因子：
1.5
通讯作者：
T. Ito
中科院分区：
文献类型：
--
作者：
Chun;M. Irie;K. Kimura;T. Teraji;T. Ito
在本研究中，高品质的同质外延金刚石(100)没有任何生长丘和异常颗粒，作为掺硼金刚石过度生长的缓冲层，以改善其电学性能。对于所使用的非掺杂缓冲层，在阴极发光(CL)光谱中，在室温(RT)下观察到了非常强的带边发射。在B掺杂同质外延层过度生长后，从化学发光光谱的角度与采用质量较差的金刚石缓冲层的情况下的化学发光特性和电学性能进行比较。结果表明，采用这种高质量的缓冲层可以有效地将1.6×1019 cm-3的B原子掺杂到外延层中，同时保持RT空穴迁移率为910cm2/vs，尽管束缚激子化学发光峰只有在较低的温度下才能得到很好的分辨。讨论了高质量缓冲层的有用性。
In this study, high-quality homoepitaxial diamond (100) without any growth hillocks or abnormal particles has been investigated as a buffer layer for boron-doped diamond overgrowth to improve the electrical properties. For the undoped buffer layer used, very strong band-edge emissions were observed at room temperature (RT) in the cathodoluminescence (CL) spectra. After the overgrowth of B-doped homoepitaxial layer, CL characteristics and electrical properties were compared with cases when diamond buffer layers with inferior quality from the viewpoint of CL spectra were employed. The results showed that employing such a high-quality buffer layer led to an efficient acceptor doping of B atoms of 1.6×1019 cm-3 to the overgrown layer while the RT hole mobility was kept at 910 cm2/Vs, although bound-exciton CL peaks were well resolved only at lower temperatures. The usefulness of the high-quality buffer layer is discussed.