Growth of wurtzite InN using MOVPE and its optical characteristics
Growth of wurtzite InN using MOVPE and its optical characteristics
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MOVPE生长纤锌矿InN及其光学特性
DOI：
10.1002/pssc.200303301
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
M. Nakao
中科院分区：
文献类型：
--
作者：
T. Matsuoka;H. Okamoto;M. Nakao
建立了金属有机气相外延生长纤锌矿InN的相图。共聚焦拉曼光谱、X射线衍射谱和反射高能电子衍射谱表明，在优化条件下生长的InN薄膜质量较好。InN具有0.8~1.0 eV和0.7~0.8 eV的带隙能，分别由光学吸收和光致发光测量。从InGaN的带隙弯曲和带隙与键长的关系来看，InN的带隙弯曲似乎接近0.8 eV。这一数值还不到1990年代使用多晶硅报告的数值的一半。Eg的温度依赖性很小，这种温度稳定性对器件有很大的好处。(2013Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
The phase diagram for wurtzite InN epitaxial growth using metalorganic vapor phase epitaxy was established. InN films grown under optimized conditions had high quality, as confirmed by confocal micro-Raman scattering, X-ray diffraction, and reflection high-energy-electron diffraction. InN showed a band-gap energy Eg of 0.8 to 1.0 eV and 0.7 to 0.8 eV as measured by optical absorption and photoluminescence, respectively. From the band-gap bowing of InGaN and the relationship between the band gap and bond length, Eg of InN seems to be near 0.8 eV. This value is less than half the value reported using polycrystals up to the 1990s. The temperature dependence of Eg is very small and this temperature stability will of great advantage to devices. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)