Invited Article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument
Invited Article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument
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DOI：
10.1063/1.4889920
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发表时间：
2014-07-01
影响因子：
1.6
通讯作者：
Hofmann, T.
中科院分区：
文献类型：
--
作者：
Kuehne, P.;Herzinger, C. M.;Hofmann, T.
我们报告了第一个集成中红外，远红外和太赫兹光学霍尔效应仪器的开发，覆盖了从3 cm（-1）到7000 cm（-1）（0.1-210 THz或0.4-870 meV）的超宽光谱范围。该仪器包括四个子系统，其中磁低温恒温器转移子系统使得磁低温恒温器子系统能够与中红外椭偏仪子系统和远红外/太赫兹椭偏仪子系统一起使用。这两个椭偏仪子系统可用作反射或透射模式的可变入射角光谱椭偏仪，并配备有多个光源和检测器。椭偏仪子系统以偏振器-样品-取样-分析器配置操作，从而允许访问归一化的4 X 4 Mueller矩阵的左上方3 X 3块。闭合循环磁低温恒温器子系统可提供室温至1.4 K之间的样品温度和高达8 T的磁场，从而能够检测横向和纵向磁场诱导的双折射。讨论了中红外、远红外、太赫兹一体化光学霍尔效应仪的理论背景和实际实现，以及光学霍尔效应数据的采集和相应的模型分析过程。作为示例，研究了在6 H-SiC上生长的外延石墨烯、碲掺杂的体GaAs样品和AlGaN/GaN高电子迁移率晶体管结构。选定的实验数据集显示了仪器的全光谱、磁场和温度范围，并展示了数据分析策略。从自由载流子在二维限制和体积材料中的影响，以及量子力学效应（间朗道能级跃迁）的观察和讨论的例子。(C)2014 AIP出版有限责任公司。
We report on the development of the first integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument, covering an ultra wide spectral range from 3 cm(-1) to 7000 cm(-1) (0.1-210 THz or 0.4-870 meV). The instrument comprises four sub-systems, where the magneto-cryostat-transfer sub-system enables the usage of the magneto-cryostat sub-system with the mid-infrared ellipsometer sub-system, and the far-infrared/terahertz ellipsometer sub-system. Both ellipsometer sub-systems can be used as variable angle-of-incidence spectroscopic ellipsometers in reflection or transmission mode, and are equipped with multiple light sources and detectors. The ellipsometer sub-systems are operated in polarizer-sample-rotating-analyzer configuration granting access to the upper left 3 x 3 block of the normalized 4 x 4 Mueller matrix. The closed cycle magneto-cryostat sub-system provides sample temperatures between room temperature and 1.4 K and magnetic fields up to 8 T, enabling the detection of transverse and longitudinal magnetic field-induced birefringence. We discuss theoretical background and practical realization of the integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument, as well as acquisition of optical Hall effect data and the corresponding model analysis procedures. Exemplarily, epitaxial graphene grown on 6H-SiC, a tellurium doped bulk GaAs sample and an AlGaN/GaN high electron mobility transistor structure are investigated. The selected experimental datasets display the full spectral, magnetic field and temperature range of the instrument and demonstrate data analysis strategies. Effects from free charge carriers in two dimensional confinement and in a volume material, as well as quantum mechanical effects (inter-Landau-level transitions) are observed and discussed exemplarily. (C) 2014 AIP Publishing LLC.