Unified model for p-n junction current-voltage characteristics
Unified model for p-n junction current-voltage characteristics
复制标题
p-n结电流-电压特性的统一模型
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
M. Cristea
中科院分区：
文献类型：
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作者：
M. Cristea
本文主要分析了低注入水平下的电流-电压pn结特性。I/V特性的高注入能级区域允许确定半导体材料的基本参数，如体掺杂浓度和载流子寿命。基于一种新的适用于低能级和高能级区域的pn结特性理论模型，给出了一个新的pn结的一般方程。可用于半导体器件的参数提取。
Current-voltage p-n junction characteristics have been analyzed mainly at low injection levels. The high injection level region of the I/V characteristic allows the possibility of determining basic parameters of the semiconductor material, like the bulk doping concentration and charge carrier lifetime. Based on a new theoretical model of the p-n junction characteristics, valid for both low level and high level regions, a new general equation of the p-n junction is presented. It can serve for parameter extraction of semiconductor devices.