Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium–Tin-Oxide/Al Mirror
Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium–Tin-Oxide/Al Mirror
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DOI：
10.1143/jjap.45.3449
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发表时间：
2006-04
影响因子：
1.5
通讯作者：
S. Huang;R. Horng;D. Wuu
中科院分区：
文献类型：
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作者：
S. Huang;R. Horng;D. Wuu
采用硅片键合、激光剥离和表面织构技术相结合的方法制备了n面向上垂直导电GaN/镜面/Si发光二极管（LED）。选择ITO/Al和Pd反射镜来改善光反射率和与p-GaN的接触电阻。结果发现，具有较高反射率的反射镜的LED呈现出更好的光学特性。具有表面纹理的GaN/ITO/Al/Si LED在20 mA下呈现最大亮度强度，其大小是原始平面GaN/蓝宝石LED的五倍。GaN/ITO/Al/Si LED的输出功率特性为8.9 mW，并且在20 mA时高于原始GaN/蓝宝石LED的输出功率特性（4.5 mW）。在大电流注入下，表面织构GaN/ITO/Al/Si LED也显示出更稳定的发光强度和输出功率。结温测量采用二极管正激法。当直流正向电流增加到200 mA时，GaN/镜面（ITO/Al）/Si和GaN/蓝宝石LED的结温分别为87和158 °C。显然，Si衬底提供良好的散热。
An n-side-up vertical conducting GaN/mirror/Si light-emitting diode (LED) has been fabricated using a combination of wafer-bonding, laser lift-off, and surface texturing techniques. The indium–tin-oxide (ITO)/Al and Pd mirror were chosen to improve optical reflectivity and contact resistance with p-GaN. It was found that the LEDs with higher reflectivity mirrors present better optical properties. A GaN/ITO/Al/Si LED with surface texturing presents maximum luminance intensity with five times the magnitude of the original planar GaN/sapphire LED at 20 mA. The output power characteristic of a GaN/ITO/Al/Si LED is 8.9 mW, and it is higher than that of the original GaN/sapphire (4.5 mW) LED at 20 mA. With high current injection, the surface textured GaN/ITO/Al/Si LED also shows more stable luminance intensity and output power. The junction temperature is measured by the diode forward method. As the dc forward current increases to 200 mA, the junction temperatures of the GaN/mirror (ITO/Al)/Si and GaN/sapphire LED are 87 and 158 °C, respectively. Obviously, the Si substrate provides good thermal dissipation.