Metastable phase formation in titanium‐silicon thin films
Metastable phase formation in titanium‐silicon thin films
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DOI：
10.1063/1.335263
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发表时间：
1985-06
影响因子：
3.2
通讯作者：
R. Beyers;R. Sinclair
中科院分区：
文献类型：
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作者：
R. Beyers;R. Sinclair
用透射电子显微镜技术研究了在硅基片上TiSi_2薄膜的形成。对于通过钛与硅衬底反应或通过烧结共沉积的（Ti+Si）混合物形成的膜，电子衍射图案表明，亚稳相TiSi 2（C49或ZrSi 2结构）-形成之前的平衡相TiSi 2（C54结构）。高分辨率图像表明，亚稳态TiSi 2-硅界面是原子级尖锐的，不存在“玻璃膜”层。将亚稳态TiSi 2转变为低电阻率、平衡TiSi 2所需的退火温度随着薄膜杂质含量的增加而增加。根据这些结果讨论了TiSi 2形成的以前的研究。
The formation of TiSi2 thin films on silicon substrates has been investigated with several transmission electron microscope techniques. For films formed either by reacting titanium with a silicon substrate or by sintering a codeposited (Ti+Si) mixture, electron diffraction patterns show that a metastable phase—TiSi2 (C49 or ZrSi2 structure)—forms prior to the equilibrium phase—TiSi2 (C54 structure). High‐resolution images indicate that the metastable TiSi2‐silicon interface is atomically sharp, with no ‘‘glassy membrane’’ layer present. The annealing temperature required to transform the metastable TiSi2 to the low resistivity, equilibrium TiSi2 increases as the thin‐film impurity content increases. Previous studies of TiSi2 formation are discussed in light of these results.