Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times
Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times
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DOI：
10.1021/acsami.5b08786
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发表时间：
2015-12-09
影响因子：
9.5
通讯作者：
Kim, Ill Won
中科院分区：
文献类型：
--
作者：
Ahn, Chang Won;Amarsanaa, Gantsooj;Kim, Ill Won
基于Pb0.97Y0.02[(Zr0.6Sn0.4)(0.925)Ti-0.075]O-3(PYZST)反铁电薄膜，我们研制了一种具有高能量密度、低能量损耗、快放电时间和高温度稳定性的电容器。在1300千伏/厘米的电场下，PYZST薄膜表现出高的可恢复能量密度U-reco=21.0J/cm(3)和高的储能效率ETA=91.9%，提供了比商业聚丙烯电容器更快的微秒放电时间。此外，PYZST薄膜在室温至100℃的温度范围内具有较高的储能性能，并具有高达1×10(7)循环的充放电疲劳耐受性。
We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb0.97Y0.02[(Zr0.6Sn0.4)(0.925)Ti-0.075]O-3 (PYZST) antiferroelectric thin-films. PYZST thin-films exhibited a high recoverable energy density of U-reco = 21.0 J/cm(3) with a high energy-storage efficiency of eta = 91.9% under an electric field of 1300 kV/cm, providing faster microsecond discharge times than those of commercial polypropylene capacitors. Moreover, PYZST thin-films exhibited high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 100 degrees C and also exhibited strong charge discharge fatigue endurance up to 1 x 10(7) cycles.