Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures
Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures
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DOI：
10.1063/1.4883890
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发表时间：
2014-06
影响因子：
4
通讯作者：
P. Ramesh;S. Krishnamoorthy;S. Rajan;G. Washington
中科院分区：
文献类型：
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作者：
P. Ramesh;S. Krishnamoorthy;S. Rajan;G. Washington
光电化学（PEC）蚀刻是一种快速、廉价的蚀刻GaN、InGaN和相关材料的方法，用于微机电系统（MEMS）的应用。在这项工作中，我们表明GaN/InGaN异质结构的带隙工程可以用来对PEC蚀刻施加实质性的控制并实现无应变悬臂梁。采用带隙选择性PEC蚀刻技术，对200 nm厚的InGaN单层进行了选择性蚀刻。我们表明，使用高掺杂保护层来均匀地限制InGaN层上的光生空穴，可以实现均匀、快速和有效的PEC蚀刻。这种方法可以使用PEC实现完全均匀的蚀刻，并且可以使许多光学和MEMS器件成为可能。
Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over PEC etching and achieve strain-free cantilevers. A single, 200-nm thick layer InGaN was selectively etched using bandgap-selective PEC etch. We show that the use of highly doped guard layers to confine photogenerated holes uniformly across the InGaN layer enables a uniform, fast, and effective PEC etch. This approach enables complete uniform etching using PEC and could enable many optical and MEMS devices.