Analysis of dual-band quantum well photodetectors
Analysis of dual-band quantum well photodetectors
复制标题
双波段量子阱光电探测器分析
DOI：
10.1063/1.1467604
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发表时间：
2002
影响因子：
3.2
通讯作者：
H. Liu
中科院分区：
文献类型：
--
作者：
V. Ryzhii;M. Ryzhii;H. Liu
我们提出了一种用于中红外和近红外或可见光双波段同时探测的量子井光探测器的简单模型。我们推导了响应率和探测率作为材料和结构参数的函数的解析公式。结果表明，近红外和可见光辐射探测特性对空穴输运参数、量子阱俘获参数和电子发射接触反射参数敏感。我们证明，一个设计合理的光电探测器可以在中红外和近红外(或可见光)探测中显示出类似的性能。所得结果可用于优化光电探测器的设计和在两个光谱范围内的特性。
We present a simple model for quantum well photodetectors for simultaneous middle infrared and near infrared or visible dual-band detection. We derive analytical formulas for the responsivity and detectivity as functions of the material and structural parameters. It is shown that the characteristics of near infrared and visible radiation detection can be sensitive to parameters of the hole transport, capture into quantum wells, and reflection from the electron emitting contact. We demonstrate that a properly designed photodetector can exhibit comparable performance for both middle infrared and near infrared (or visible) detection. The obtained results can be used to optimize the photodetector design and characteristics in both spectral ranges.