High current gain 4H-SiC npn bipolar junction transistors
High current gain 4H-SiC npn bipolar junction transistors
复制标题
高电流增益 4H-SiC npn 双极结型晶体管
DOI：
10.1109/led.2003.813520
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发表时间：
2003
影响因子：
4.9
通讯作者：
J. Cooper
中科院分区：
文献类型：
--
作者：
Chih;J. Cooper
作者报告了 npn 外延发射极 4H-SiC 双极结晶体管的共发射极电流增益 /spl beta/ 为 55。 p+基极接触注入与发射极指边缘之间的间距对于获得高电流增益至关重要。这些器件的 V/sub CEO/ 为 500 V，V/sub CBO/ 为 700 V。
The authors report a common emitter current gain /spl beta/ of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base contact implant and the edge of the emitter finger is critical in obtaining high-current gain. V/sub CEO/ of these devices is 500 V, and V/sub CBO/ is 700 V.