Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode
Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode
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DOI：
10.1063/1.1853526
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发表时间：
2005-01
影响因子：
4
通讯作者：
J. Schmalhorst;S. Kämmerer;G. Reiss;A. Hütten
中科院分区：
文献类型：
--
作者：
J. Schmalhorst;S. Kämmerer;G. Reiss;A. Hütten
自旋电子学需要在技术上相关的设备中实现半金属材料。我们制备的Co2MnSi/AlOx/Co7Fe3结在1 mV和20K下的隧穿磁阻为94.6%。在20K的非弹性电子隧穿谱中，在电极和势垒中有典型的磁振子和声子激发，在−22 mV附近有一个额外的肩部，这在Co7Fe3/AlOx/Ni81Fe19参照结中没有观察到。此外，隧道磁阻的偏置电压和温度依赖关系比参考结要大得多。讨论了与Co2MnSi/AlOx界面的结构和磁性有关的各种电流贡献的输运性质。
Spintronics needs half-metallic materials implemented in technologically relevant devices. We prepare Co2MnSi/AlOx/Co7Fe3 junctions showing a tunneling magnetoresistance of 94.6% at 1 mV and 20 K. Their inelastic electron tunneling spectra at 20 K show typical magnon and phonon excitations in the electrode and the barrier and an additional shoulder around −22 mV not observed in Co7Fe3/AlOx/Ni81Fe19 reference junctions. Furthermore, the bias voltage and temperature dependence of the tunneling magnetoresistance is considerably larger than for the reference junctions. The transport properties are discussed with respect to a variety of current contributions associated with the structural and magnetic properties of the Co2MnSi/AlOx interface.