Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures
Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures
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DOI：
10.1063/1.4961871
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发表时间：
2016-08
影响因子：
3.2
通讯作者：
Y. Fujino;K. Kita
中科院分区：
文献类型：
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作者：
Y. Fujino;K. Kita
研究了一种利用瞬态电容测量技术估算碳化硅金属氧化物半导体（MOS）电容器近界面氧化物陷阱密度的方法。在室温和低温下测量的瞬态电容特性拟合到描述去陷阱过程的简单模型，使我们能够表征在离界面不同距离处的陷阱的响应。在此拟合中考虑了陷阱位置在氧化物中的分布和响应时间的分布。将该方法应用于MOS电容器样品，通过调节热氧化条件来显示界面态密度的显着降低。有人发现，氧化物陷阱的密度，特别是在空间上浅的区域内的几个埃的界面，是敏感的热氧化物生长条件。
A method for estimating near-interface oxide trap density in silicon carbide metal-oxide-semiconductor (MOS) capacitors by transient capacitance measurements was investigated. The fitting of the transient capacitance characteristics measured at room and low temperatures to a simple model describing the de-trapping process enables us to characterize the responses of the traps at various distances from the interface. The distribution of the trap locations in the oxide and that of response times were taken into account in this fitting. This method was applied to MOS-capacitor samples to show the significant reduction in interface state density by tuning the thermal oxidation conditions. It was found that the density of the oxide traps, especially in the spatially shallow region within several angstroms from the interface, is sensitive to thermal oxide growth conditions.