High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p–n junctions
High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p–n junctions
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DOI：
10.1063/1.1850192
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发表时间：
2005-01
影响因子：
4
通讯作者：
H. B. Lu;S. Dai;Zhong-Bo Chen;Y. L. Zhou;B. Cheng;K. Jin;L. F. Liu;G. Yang;Xiuliang Ma
中科院分区：
文献类型：
--
作者：
H. B. Lu;S. Dai;Zhong-Bo Chen;Y. L. Zhou;B. Cheng;K. Jin;L. F. Liu;G. Yang;Xiuliang Ma
利用激光分子束外延技术制备的掺Sr LaMnO_3和掺Nb SrTiO_3 p-n结在低磁场下具有很大的正磁阻效应和很高的磁电阻灵敏度。在290 K下，5 Oe、100 Oe和1000 Oe的MR比分别为11%、23%和26%;在255 K下，5 Oe、100 Oe和1000 Oe的MR比分别为53%、80%和94%。当外加磁场从0变化到5 Oe时，其磁电阻灵敏度分别为290 K时85 Omega/Oe、255 K时246 Omega/Oe和190 K时136 Omega/Oe。(C)2005年美国物理学会。
Large positive magnetoresistance (MR) and high MR sensitivity in low magnetic fields have been discovered in the Sr-doped LaMnO3 and Nb-doped SrTiO3 p-n junctions fabricated by laser molecular-beam epitaxy. The MR ratios, defined as DeltaR/R-0, DeltaR = R-H-R-0, are observed as large as 11 % in 5 Oe, 23 % in 100 Oe, and 26 % in 1000 Oe at 290 K; 53% in 5 Oe, 80 % in 100 Oe, and 94 % in 1000 Oe at 255 K. The MR sensitivities are 85 Omega/Oe at 290 K, 246 Omega/Oe at 255 K, and 136 Omega/Oe at 190 K, respectively, with the applied magnetic field changed from 0 to 5 Oe. The positive MR ratios and high MR sensitivities of the p-n junctions are very different from that of the LaMnO3 compound family. (C) 2005 American Institute of Physics.